VCBO Collector-base voltage Open emitter -120 V
VCEO Collector-emitter voltage Open base -120 V
VEBO Emitter-base voltage Open collector -5 V
IC Collector current -2 A
PC Collector power dissipation TC=25℃ 25 W
Tj Junction temperature 150 ℃
Tstg Storage temperature -65~150 ℃
Fig.1 simplified outline (TO-220) and symbol
查询供应商Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA1078
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V(BR)CEO Collector-emitter breakdown voltage IC=-1mA ,RBE=∞ -120 V
V(BR)CBO Collector-base breakdown voltage IC=-1μA ,IE=0 -120 V
V(BR)EBO Emitter-base breakdown voltage IE=-1μA ,IC=0 -5 V
VCEsat Collector-emitter saturation voltage IC=-0.7A; IB=-70mA -0.45 -1.0 V
VBE Base-emitter on voltage IC=-0.7A ; VCE=-5V -0.8 -1.7 V
ICBO Collector cut-off current VCB=-120V; IE=0 -1 μA
ICEO Collector cut-off current VCE=-120V; IB=0 -100 μA
IEBO Emitter cut-off current VEB=-5V; IC=0 -1 μA
hFE-1 DC current gain IC=-0.3A ; VCE=-5V 60 350
hFE-2 DC current gain IC=-0.7A ; VCE=-5V 50
fT Transition frequency IC=-0.5A ; VCE=-10V;f=10MHz 140 MHz
COB Output capacitance IE=0 ; VCB=-20V;f=1MHz 100 pF
